Insulated Gate Bipolar Transistor (IGBT) Basics
نویسنده
چکیده
IGBT Fundamentals The Insulated Gate Bipolar Transistor (IGBT) is a minority-carrier device with high input impedance and large bipolar current-carrying capability. Many designers view IGBT as a device with MOS input characteristics and bipolar output characteristic that is a voltage-controlled bipolar device. To make use of the advantages of both Power MOSFET and BJT, the IGBT has been introduced. It’s a functional integration of Power MOSFET and BJT devices in monolithic form. It combines the best attributes of both to achieve optimal device characteristics [2].
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